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Mrs. Daisy
Address:
No. 218, Xinghu Street, Suzhou Industrial Park, Suzhou, Jiangsu, China
Telephone:
Zip Code:
Fax:
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Account Registered in:
2011
Business Range:
Electrical & Electronics, Metallurgy, Mineral & Energy
Management System Certification:
ISO 9001
Business Type:
Manufacturer/Factory
Main Products:
Company Introduction
Trade Capacity
Production Capacity
Suzhou Nanowin Science and Technology Co., Ltd (NANOWIN) founded in Suzhou Industry Park, China in May, 2007, is a high-tech company devoting to fabricate high-quality Gallium Nitride (GaN) substrates and develop the related technologies.
NANOWIN's key advantage is unrivaled materials expertise owning essential patents in GaN substrates and growth technologies. NANOWIN offers standard and ...
NANOWIN's key advantage is unrivaled materials expertise owning essential patents in GaN substrates and growth technologies. NANOWIN offers standard and ...
Suzhou Nanowin Science and Technology Co., Ltd (NANOWIN) founded in Suzhou Industry Park, China in May, 2007, is a high-tech company devoting to fabricate high-quality Gallium Nitride (GaN) substrates and develop the related technologies.
NANOWIN′s key advantage is unrivaled materials expertise owning essential patents in GaN substrates and growth technologies. NANOWIN offers standard and customized free-standing GaN substrates and thick GaN/sapphire templates with extra low dislocation densities which are suitable for applications in high-power LED, blue LD and high-power electronic/electric devices. The main products of NANOWIN are 2-inch GaN/sapphire templates with GaN thickness of 15 to 90 microns, 2-inch free-standing GaN substrates with thickness around 350 microns and Ga face dislocation density within 106 cm-2, small square (side length 1~2 centimeters/1inch/1.5inch/1.8inch) free-standing GaN substrates, non-polar GaN substrates (a/m face), high-crystallinity GaN powder and AlN substrates (PSS). All the GaN templates and substrates produced by NANOWIN include three categories: N-type doped, undoped and semi-insulating doped.
Our strategic goal is to become a leading nitride semiconductor material provider and a pioneer in the industry applications of nitride semiconductors.
NANOWIN′s key advantage is unrivaled materials expertise owning essential patents in GaN substrates and growth technologies. NANOWIN offers standard and customized free-standing GaN substrates and thick GaN/sapphire templates with extra low dislocation densities which are suitable for applications in high-power LED, blue LD and high-power electronic/electric devices. The main products of NANOWIN are 2-inch GaN/sapphire templates with GaN thickness of 15 to 90 microns, 2-inch free-standing GaN substrates with thickness around 350 microns and Ga face dislocation density within 106 cm-2, small square (side length 1~2 centimeters/1inch/1.5inch/1.8inch) free-standing GaN substrates, non-polar GaN substrates (a/m face), high-crystallinity GaN powder and AlN substrates (PSS). All the GaN templates and substrates produced by NANOWIN include three categories: N-type doped, undoped and semi-insulating doped.
Our strategic goal is to become a leading nitride semiconductor material provider and a pioneer in the industry applications of nitride semiconductors.
International Commercial Terms(Incoterms):
FOB, CIF
Terms of Payment:
T/T, Western Union
Average Lead Time:
Peak Season Lead Time: 1-3 months, Off Season Lead Time: within 15 workdays
Number of Foreign Trading Staff:
4~10 People
Export Year:
2008-07-10
Export Percentage:
21%~30%
Annual Export Revenue:
10000~1million USD
Main Markets:
North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Import & Export Mode:
Have Own Export License
Factory Address:
NO.218,Xinghu Street,Suzhou Industrial Park,Jiangsu,PRC
No. of R&D Staff:
11-20 People
No. of Production Lines:
4